Inventor · Beijing, CN

Lan Yu

73Patents
4h-index
86Co-inventors
61Inventor score

Filing activity: Jan 25, 2016 → Jul 17, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US10797163B1 Leakage control for gate-all-around field-effect transistor devices Electricity 12 Active
US11177258B2 Stacked nanosheet CFET with gate all around structure Electricity 8 Active
US10910470B1 Nanosheet transistors with inner airgaps Electricity 4 Active
US11586067B2 Structure and method of advanced LCoS back-plane having robust pixel via metallization Physics 4 Active
US11573452B2 Method for LCoS DBR multilayer stack protection via sacrificial hardmask for RIE and CMP processes Physics 4 Active
US11164870B2 Stacked upper fin and lower fin transistor with separate gate Electricity 3 Active
US11024670B1 Forming an MRAM device over a transistor Electricity 2 Active
US11289573B2 Contact resistance reduction in nanosheet device structure Electricity 2 Active
US10943989B2 Gate to source/drain leakage reduction in nanosheet transistors via inner spacer optimization Performing Operations; Transporting 2 Active
US11075334B2 Spin-orbit-torque magneto-resistive random access memory with stepped bottom electrode Electricity 2 Active
US11524601B2 Vehicle recharge of home energy storage Emerging Cross-Sectional Technologies 1 Active
US10239407B2 Variable carrier switching frequency control of variable voltage converter Emerging Cross-Sectional Technologies 1 Active
US11177369B2 Stacked vertical field effect transistor with self-aligned junctions Electricity 1 Active
US11189725B2 VTFET with cell height constraints Electricity 1 Active
US12287643B2 Leader selection in V2X group management Electricity 0 Active
US10868033B2 Three-dimensional memory devices and fabricating methods thereof Electricity 0 Active
US11469248B2 Three-dimensional memory devices and fabricating methods thereof Electricity 0 Active
US12176416B2 Stacked nanosheet transistor with defect free channel Electricity 0 Active
US11705504B2 Stacked nanosheet transistor with defect free channel Electricity 0 Active
US12336336B2 Indium-gallium-nitride light emitting diodes with light reflecting mirrors Electricity 0 Active
US11880052B2 Structure and method of mirror grounding in LCoS devices Physics 0 Active
US11881539B2 Structure and method of advanced LCoS back-plane having highly reflective pixel via metallization Electricity 0 Active
US11239119B2 Replacement bottom spacer for vertical transport field effect transistors Electricity 0 Active
US12002753B2 Electronic fuse with passive two-terminal phase change material and method of fabrication Electricity 0 Active
US11164947B2 Wrap around contact formation for VTFET Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.