Substrate and substrate processing method
US11574814B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2020 |
| Grant date | Feb 7, 2023 |
| Priority date | — |
| Expiry date | Aug 12, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate includes an etching target film as a target of etching and a first film. The first film is formed on the etching target film and is made of a material having an etching rate smaller than an etching rate of the etching target film. The first film has multiple first openings formed at a first distance therebetween in one direction of a surface of the first film. The first film has a second opening formed at an outside of the multiple first openings in the one direction while being spaced apart from an outermost one of the first openings by a second distance equivalent to the first distance. The second opening has a width larger than a width of the first openings and a depth smaller than a depth of the first openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.