Sintering method using a sacrificial layer on the backside metallization of a semiconductor die

US11581194B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Frederik Otto · Recklinghausen, DE
• Paul Frank · Villach, AT

Key dates

• Filing date: Feb 4, 2021
• Grant date: Feb 14, 2023
• Expiry date: Mar 15, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/94
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An electronic device comprises a semiconductor die, a layer stack disposed on the semiconductor die and comprising one or more functional layers, wherein the layer stack comprises a protection layer which is an outermost functional layer of the layer stack, and a sacrificial layer disposed on the protection layer, wherein the sacrificial layer comprises a material which decomposes or becomes volatile at a temperature between 100° and 400° C.