Method for forming long channel back-side power rail device
US11581224B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2020 |
| Grant date | Feb 14, 2023 |
| Priority date | — |
| Expiry date | Oct 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0133
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor transistor device. The method comprises forming a fin-shaped channel structure over a substrate and forming a first source/drain epitaxial structure and a second source/drain epitaxial structure on opposite endings of the fin structure. The method further comprises forming a metal gate structure surrounding the fin structure. The method further comprises flipping and partially removing the substrate to form a back-side capping trench while leaving a lower portion of the substrate along upper sidewalls of the first source/drain epitaxial structure and the second source/drain epitaxial structure as a protective spacer. The method further comprises forming a back-side dielectric cap in the back-side capping trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.