Improper ferroelectric active and passive devices
US11581417B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2018 |
| Grant date | Feb 14, 2023 |
| Priority date | — |
| Expiry date | May 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A capacitor is provided which comprises: a first structure comprising metal; a second structure comprising metal; and a third structure between the first and second structures, wherein the third structure comprises an improper ferroelectric material. In some embodiments, a field effect transistor (FET) is provided which comprises: a substrate; a source and drain adjacent to the substrate; and a gate stack between the source and drain, wherein the gate stack includes: a dielectric; a first structure comprising improper ferroelectric material, wherein the first structure is adjacent to the dielectric; and a second structure comprising metal, wherein the second structure is adjacent to the first structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.