Single-photon avalanche photodiode
US11581449B2 · kind B2 · utility
0Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2019 |
| Grant date | Feb 14, 2023 |
| Priority date | — |
| Expiry date | Nov 10, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
The present disclosure relates to a photodiode comprising a first part made of silicon and a second part made of doped germanium lying on and in contact with the first part, the first part comprising a stack of a first area and of a second area forming a p-n junction and the doping level of the germanium increasing as the distance from the p-n junction increases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.