Structure and method of advanced LCoS back-plane having robust pixel via metallization
US11586067B2 · kind B2 · utility
4Cited by
8References
18Claims
0Family size
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Key dates
| Filing date | Nov 20, 2020 |
| Grant date | Feb 21, 2023 |
| Priority date | — |
| Expiry date | Nov 20, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136277
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Processing methods may be performed to form a pixel material in a semiconductor substrate. The methods may include forming a lithographic mask overlying the semiconductor substrate. The lithographic mask may include a window. The method may include forming a via in the semiconductor substrate by a dry etch process through the window. The method may also include forming the pixel material by depositing a fill material in the via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.