Plasma ignition optimization in semiconductor processing chambers
US11587765B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2020 |
| Grant date | Feb 21, 2023 |
| Priority date | — |
| Expiry date | Feb 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of reducing reflected Radio Frequency (RF) power in substrate processing chambers may include accessing input parameters for a processing chamber that are derived from a recipe to perform a process on a substrate. The input parameters may be provided to a model that has been trained using previous input parameters and corresponding sensor measurements for the chamber. A predicted amount of reflected RF power may be received from the model and it may be determined whether the predicted reflected RF power is optimized. The input parameters may be repeatedly adjusted and processed by the model until input parameter values are found that optimize the reflected RF power. Optimized input parameters may then be provided to the chamber to process the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.