Patent · US Active

Semiconductor structure

US11587845B2 · kind B2 · utility

0Cited by
18References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 6, 2021
Grant dateFeb 21, 2023
Priority date
Expiry dateAug 17, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/19105
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate, a die stack disposed over the substrate, a heat spreader disposed over the substrate and having a surface facing the substrate, and a thermal interface material (TIM) disposed between the die stack and the heat spreader. A bottommost die of the die stack includes a surface exposed from remaining dies of the die stack from a top view perspective; and the TIM is in contact with the exposed surface of the bottommost die and the surface of the heat spreader, and is in contact with a sidewall of at least one of the plurality of dies of the die stack.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.