Bipolar junction transistor (BJT) structure and related method
US11588044B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 2, 2020 |
| Grant date | Feb 21, 2023 |
| Priority date | — |
| Expiry date | Feb 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/184
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure provide a bipolar junction transistor (BJT) structure and related method. A BJT according to the disclosure may include a base over a semiconductor substrate. A collector is over the semiconductor substrate and laterally abuts a first horizontal end of the base. An emitter is over the semiconductor substrate and laterally abuts a second horizontal end of the base opposite the first horizontal end. A horizontal interface between the emitter and the base is smaller than a horizontal interface between the collector and the base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.