Film etching method for etching film
US11594422B2 · kind B2 · utility
0Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2021 |
| Grant date | Feb 28, 2023 |
| Priority date | — |
| Expiry date | Aug 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method includes a step of selectively forming deposit on a top surface of a mask disposed on a film of a substrate, a step of etching the film after the step of forming the deposit, a step of forming a layer of chemical species included in plasma of a processing gas, on the substrate, and a step of supplying ions from plasma of an inert gas to the substrate so that the chemical species react with the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.