Patent · US Active

Method for forming a structure with a hole

US11594450B2 · kind B2 · utility

0Cited by

2,212References

32Claims

0Family size

Assignee

ASM IP Holding B.V. · NL

Inventors

Dieter Pierreux · Dilbeek, BE
Steven R. A. Van Aerde · Tielt-Winge, BE
Bert Jongbloed · Oud-Heverlee, BE

Key dates

Filing date	Aug 17, 2020
Grant date	Feb 28, 2023
Priority date	—
Expiry date	Apr 23, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10B43/27
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for forming a structure with a hole on a substrate is disclosed. The method may comprise: depositing a first structure on the substrate; etching a first part of the hole in the first structure; depositing a plug fill in the first part of the hole; depositing a second structure on top of the first structure; etching a second part of the hole substantially aligned with the first part of the hole in the second structure; and, etching the plug fill of the first part of the hole and thereby opening up the hole by dry etching. In this way 3-D NAND device may be provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.