Back-end-of-line compatible metal-insulator-metal on-chip decoupling capacitor
US11594596B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2021 |
| Grant date | Feb 28, 2023 |
| Priority date | — |
| Expiry date | Mar 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention are directed to a back-end-of-line (BEOL) compatible metal-insulator-metal on-chip decoupling capacitor (MIMCAP). This BEOL compatible process includes a thermal treatment for inducing an amorphous-to-cubic phase change in the insulating layer of the MIM stack prior to forming the top electrode. In a non-limiting embodiment of the invention, a bottom electrode layer is formed, and an insulator layer is formed on a surface of the bottom electrode layer. The insulator layer can include an amorphous dielectric material. The insulator layer is thermally treated such that the amorphous dielectric material undergoes a cubic phase transition, thereby forming a cubic phase dielectric material. A top electrode layer is formed on a surface of the cubic phase dielectric material of the insulator layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.