Method of processing a power semiconductor device

US11594621B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Antonio Vellei · Villach, AT
• Markus Beninger-Bina · Großhelfendorf, DE
• Matteo Dainese · Munich, DE
• Christian Jaeger · Munich, DE
• Johannes Georg Laven · Taufkirchen, DE
• Alexander Philippou · Munich, DE
• Francisco Javier Santos Rodriguez · Villach, AT

Key dates

• Filing date: Nov 3, 2020
• Grant date: Feb 28, 2023
• Expiry date: Feb 8, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of processing a power semiconductor device includes: providing a semiconductor body with a drift region of a first conductivity type; forming a plurality of trenches extending into the semiconductor body along a vertical direction and arranged adjacent to each other along a first lateral direction; providing a mask arrangement at the semiconductor body, the mask arrangement having a lateral structure according to which some of the trenches are exposed and at least one of the trenches is covered by the mask arrangement along the first lateral direction; forming, below bottoms of the exposed trenches, a plurality of doping regions of a second conductivity type complementary to the first conductivity type; removing the mask arrangement; and extending the plurality of doping regions in parallel to the first lateral direction such that the plurality of doping regions overlap and form a barrier region of the second conductivity type adjacent to the bottoms of the exposed trenches.