Method to increase barrier film removal rate in bulk tungsten slurry
US11597854B2 · kind B2 · utility
0Cited by
5References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2019 |
| Grant date | Mar 7, 2023 |
| Priority date | — |
| Expiry date | Mar 6, 2040 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08K2201/005
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
The invention relates to a chemical-mechanical polishing composition comprising (a) a first abrasive comprising cationically modified colloidal silica particles, (b) a second abrasive having a Mohs hardness of about 5.5 or more, (c) a cationic polymer, (d) an iron containing activator, (e) an oxidizing agent, and (f) water. The invention also relates to a method of chemically mechanically polishing a substrate, especially a substrate comprising tungsten and barrier layers (e.g., nitrides), with the polishing composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.