Patent · US Active

Power semiconductor module and method for producing a power semiconductor module

US11598904B2 · kind B2 · utility

0Cited by

2References

5Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ivan Nikitin · Regensburg, DE
Dirk Ahlers · Hersbruck, DE
Andreas Grassmann · Villach, AT
Andre Uhlemann · Dortmund, DE

Key dates

Filing date	Dec 5, 2019
Grant date	Mar 7, 2023
Priority date	—
Expiry date	Aug 13, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH05K3/14
WIPO fieldAudio-visual technology
WIPO sectorElectrical engineering

Abstract

A power semiconductor module includes a first substrate, wherein the first substrate includes aluminum, a first aluminum oxide layer arranged on the first substrate, a conductive layer arranged on the first aluminum oxide layer, a first semiconductor chip, wherein the first semiconductor chip is arranged on the conductive layer and is electrically connected thereto, and an electrical insulation material enclosing the first semiconductor chip, wherein the first aluminum oxide layer is configured to electrically insulate the first semiconductor chip from the first substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.