Redistribution substrate, method of fabricating the same, and semiconductor package including the same
US11600564B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2021 |
| Grant date | Mar 7, 2023 |
| Priority date | — |
| Expiry date | Apr 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided and includes forming a first conductive pattern; forming a photosensitive layer on the first conductive pattern, the photosensitive layer having a first through hole exposing a portion of the first conductive pattern; forming a first via in the first through hole; removing the photosensitive layer; forming a dielectric layer encapsulating the first conductive pattern and the first via, the dielectric layer exposing a top surface of the first via; forming a second conductive pattern on the top surface of the first via, forming a dielectric layer covering the second conductive pattern; etching the dielectric layer to form a second through hole that exposes a portion of the second conductive pattern; forming a second via filling the second through hole and an under bump pad on the second via; and mounting a semiconductor chip on the under bump pad using a connection terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.