Microwave integrated circuits including gallium-nitride devices on silicon
US11600614B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2021 |
| Grant date | Mar 7, 2023 |
| Priority date | — |
| Expiry date | Mar 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various integrated circuits formed using gallium nitride and other materials are described. In one example, an integrated circuit includes a first integrated device formed over a first semiconductor structure in a first region of the integrated circuit, a second integrated device formed over a second semiconductor structure in a second region of the integrated circuit, and a passive component formed over a third region of the integrated circuit, between the first region and the second region. The third region comprises an insulating material, which can be glass in some cases. Further, the passive component can be formed over the glass in the third region. The integrated circuit is designed to avoid electromagnetic coupling between the passive component, during operation of the integrated circuit, and interfacial parasitic conductive layers existing in the first and second semiconductor structures, to improve performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.