Cyclic low temperature film growth processes
US11605536B2 · kind B2 · utility
1Cited by
7References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 19, 2020 |
| Grant date | Mar 14, 2023 |
| Priority date | — |
| Expiry date | Jan 10, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of nitridation includes cyclically performing the following steps in situ within a processing chamber at a temperature less than about 400° C.: treating an unreactive surface of a substrate in the processing chamber to convert the unreactive surface to a reactive surface by exposing the unreactive surface to an energy flux, and nitridating the reactive surface using a nitrogen-based gas to convert the reactive surface to a nitride layer including a subsequent unreactive surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.