Patent · US Active

Via for semiconductor devices and related methods

US11605576B2 · kind B2 · utility

1Cited by
4References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 25, 2019
Grant dateMar 14, 2023
Priority date
Expiry dateAug 18, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/80895
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A via for semiconductor devices is disclosed. Implementations of vias for semiconductor devices may include: a semiconductor substrate that includes a first side; a via extending from the first side of the semiconductor substrate to a pad; a polymer layer coupled along an entire sidewall of the via, the polymer layer in direct contact with the pad; and a metal layer directly coupled over the polymer layer and directly coupled with the pad.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.