Power device with graded channel
US11605732B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Nov 6, 2019 |
| Grant date | Mar 14, 2023 |
| Priority date | — |
| Expiry date | Nov 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power device includes a silicon carbide substrate. A gate is provided on a first side of the silicon carbide substrate. A graded channel includes a first region having a first dopant concentration and a second region having a second dopant concentration, the second dopant concentration being greater than the first dopant concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.