MRAM structure and method of fabricating the same

US11605777B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Da-Jun Lin
• Min-Hua Tsai · San Fernando, US
• Tai-Cheng Hou · Tainan, TW
• Fu-Yu Tsai · Hsinchu, TW
• Bin-Siang Tsai · Shiliujia, TW

Key dates

• Filing date: Aug 31, 2020
• Grant date: Mar 14, 2023
• Expiry date: Jan 16, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/10

Abstract

An MRAM structure includes a dielectric layer. A first MRAM, a second MRAM and a third MRAM are disposed on the dielectric layer, wherein the second MRAM is disposed between the first MRAM and the third MRAM, and the second MRAM includes an MTJ. Two gaps are respectively disposed between the first MRAM and the second MRAM and between the second MRAM and the third MRAM. Two tensile stress pieces are respectively disposed in each of the two gaps. A first compressive stress layer surrounds and contacts the sidewall of the MTJ entirely. A second compressive stress layer covers the openings of each of the gaps and contacts the two tensile stress pieces.