System and method for Z-PAT defect-guided statistical outlier detection of semiconductor reliability failures
US11614480B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2021 |
| Grant date | Mar 28, 2023 |
| Priority date | — |
| Expiry date | Jun 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method for Z-PAT defect-guided statistical outlier detection of semiconductor reliability failures includes receiving electrical test bin data with semiconductor die data for a plurality of wafers in a lot generated by a statistical outlier detection subsystem configured to perform Z-direction Part Average Testing (Z-PAT) on test data generated by an electrical test subsystem after fabrication of the plurality of wafers in the lot, receiving characterization data for the plurality of wafers in the lot generated by a semiconductor fab characterization subsystem during the fabrication of the plurality of wafers in the lot, determining a statistical correlation between the electrical test bin data and the characterization data at a same x, y position on each of the plurality of wafers in the lot, and locating defect data signatures on the plurality of wafers in the lot based on the statistical correlation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.