Regulator of a sense amplifier
US11615820B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 30, 2021 |
| Grant date | Mar 28, 2023 |
| Priority date | — |
| Expiry date | Sep 30, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A system and method for operating a memory cell is provided. A non-volatile memory storage device includes an array of memory cells of differential or single-ended type. In an embodiment, a regulator is coupled to a sense amplifier. The regulator is configured to generate a voltage to gate terminals of one or two transistors of the sense amplifier. In the differential type, the voltage is generated such that the first bias current and the second bias current have a current value equal to the sum of a maximum current flowing in a memory cell being in a RESET state and a fixed current. In the single-ended type, the regulated voltage is generated such that the first bias current and the second bias current have a current value equal to the sum of a fixed current and the reference current generated by the reference current source across temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.