Variable resistance memory device
US11616197B2 · kind B2 · utility
0Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2020 |
| Grant date | Mar 28, 2023 |
| Priority date | — |
| Expiry date | May 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
Abstract
A variable resistance memory device includes a plurality of memory cells arranged on a substrate. Each of the memory cells includes a selection element pattern and a variable resistance pattern stacked on the substrate. The selection element pattern includes a first selection element pattern having a chalcogenide material and a second selection element pattern having a metal oxide and coupled to the first selection element pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.