Multiple reflectometry for measuring etch parameters

US11619594B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Blake Erickson · Gilroy, US
• Keith R. Berding · San Jose, US
• Michael Kutney · Santa Clara, US
• Soumendra N. Barman · Stanford, US
• Zhaozhao Zhu · Milpitas, US
• Michelle SanPedro · Mountain View, US
• Suresh Polali Narayana Rao · Kanchinakote, IN

Key dates

• Filing date: Apr 28, 2021
• Grant date: Apr 4, 2023
• Expiry date: Apr 28, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L22/26
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A system includes a memory and at least one processing device operatively coupled to the memory to facilitate an etch recipe development process by performing a number of operations. The operations include receiving a request to initiate an iteration of an etch process using an etch recipe to etch a plurality of materials each located at a respective one of a plurality of reflectometry measurement points, obtaining material thickness data for each of the plurality of materials resulting from the iteration of the etch process, and determining one or more etch parameters based on the material thickness data.