Selective deposition of a passivation film on a metal surface
US11621161B2 · kind B2 · utility
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Key dates
| Filing date | Oct 27, 2020 |
| Grant date | Apr 4, 2023 |
| Priority date | — |
| Expiry date | Jun 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of selectively depositing films on substrates are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Also described is exposing a substrate surface comprising a metal surface and a dielectric surface to a docking precursor to form a passivation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.