Vapor phase thermal etch solutions for metal oxo photoresists
US11621172B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2021 |
| Grant date | Apr 4, 2023 |
| Priority date | — |
| Expiry date | Jun 15, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.