Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon

US11621270B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Dimitrios Pavlopoulos · Boise, US
• Kunal Shrotri · Boise, US
• Anish A. Khandekar · Boise, US

Key dates

• Filing date: Jul 26, 2021
• Grant date: Apr 4, 2023
• Expiry date: Jul 26, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/405

Abstract

A method of forming polysilicon comprises forming a first polysilicon-comprising material over a substrate, with the first polysilicon-comprising material comprising at least one of elemental carbon and elemental nitrogen at a total of 0.1 to 20 atomic percent. A second polysilicon-comprising material is formed over the first polysilicon-comprising material. The second polysilicon-comprising material comprises less, if any, total elemental carbon and elemental nitrogen than the first polysilicon-comprising material. Other aspects and embodiments, including structure independent of method of manufacture, are disclosed.