Magnetoresistive random access memory and method for fabricating the same
US11621296B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Apr 6, 2021 |
| Grant date | Apr 4, 2023 |
| Priority date | — |
| Expiry date | May 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate; forming a first top electrode on the first MTJ and a second top electrode on the second MTJ; forming a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ; forming a passivation layer on the first ULK dielectric layer, wherein a bottom surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the first MTJ; and forming a second ULK dielectric layer on the passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.