Method for etching or deposition
US11624111B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Jan 15, 2021 |
| Grant date | Apr 11, 2023 |
| Priority date | — |
| Expiry date | Jan 15, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32135
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A methodology for (a) the etching of films of Al2O3, HfO2, ZrO2, W, Mo, Co, Ru, SiN, or TiN, or (b) the deposition of tungsten onto the surface of a film chosen from Al2O3, HfO2, ZrO2, W, Mo, Co, Ru, Ir, SiN, TiN, TaN, WN, and SiO2, or (c) the selective deposition of tungsten onto metallic substrates, such as W, Mo, Co, Ru, Ir and Cu, but not metal nitrides or dielectric oxide films, which comprises exposing said films to WOCl4 in the presence of a reducing gas under process conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.