Robert Wright, Jr.
26Patents
4h-index
27Co-inventors
63Inventor score
Filing activity: Apr 25, 1974 → Sep 27, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5002645A | Process of separating and recovering metal values from a waste stream | Emerging Cross-Sectional Technologies | 31 | Expired |
| US4209463A | Promoting the formation of nitrodiarylamines from nitrohaloarenes, activated aryl amines and sodium carbonates | Chemistry; Metallurgy | 23 | Expired |
| US10392700B2 | Solid vaporizer | Chemistry; Metallurgy | 10 | Active |
| US3951723A | Bonding fibers to rubber with resol condensates of unsaturate-resorcinol polymers | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5708507A | Temperature resolved molecular emission spectroscopy of materials | Physics | 3 | Expired |
| US10526697B2 | High-purity tungsten hexacarbonyl for solid source delivery | Chemistry; Metallurgy | 3 | Active |
| US10451540B2 | Multi-pass gas cell with mirrors in openings of cylindrical wall for IR and UV monitoring | Physics | 2 | Active |
| US11035038B2 | Cold sintering of solid precursors | Chemistry; Metallurgy | 2 | Active |
| US9047590B2 | Single identifiable entry point for accessing contact information via a computer network | Physics | 2 | Active |
| US11761081B2 | Methods for depositing tungsten or molybdenum films | Electricity | 1 | Active |
| US8869033B2 | Providing contact information via a computer network | Physics | 1 | Active |
| US4228103A | Effecting condensation of nitrohaloarene and formyl derivative of a primary aromatic amine with alkali metal hydroxide | Chemistry; Metallurgy | 1 | Expired |
| US6833027B2 | Method of manufacturing high voltage schottky diamond diodes with low boron doping | Electricity | 1 | Expired |
| US9135593B2 | Internal management of contact requests | Physics | 1 | Active |
| US11352383B2 | Group VI precursor compounds | Electricity | 0 | Active |
| US12258356B2 | Group VI precursor compounds | Electricity | 0 | Active |
| US11107675B2 | CVD Mo deposition by using MoOCl4 | Electricity | 0 | Active |
| US11807653B2 | Group VI precursor compounds | Electricity | 0 | Active |
| US11624111B2 | Method for etching or deposition | Electricity | 0 | Active |
| US11560625B2 | Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor | Chemistry; Metallurgy | 0 | Active |
| US11421320B2 | Chemical delivery system and method of operating the chemical delivery system | Chemistry; Metallurgy | 0 | Active |
| US11919780B2 | Oxyhalide precursors | Chemistry; Metallurgy | 0 | Active |
| US11746413B2 | Chemical delivery system and method of operating the chemical delivery system | Chemistry; Metallurgy | 0 | Active |
| US11932935B2 | Deposition process for molybdenum or tungsten materials | Chemistry; Metallurgy | 0 | Active |
| US12252787B2 | Methods for depositing tungsten or molybdenum films | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.