Method and apparatus for non line-of-sight doping
US11631588B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2020 |
| Grant date | Apr 18, 2023 |
| Priority date | — |
| Expiry date | Aug 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of doping a substrate. The method may include providing a substrate in a process chamber. The substrate may include a semiconductor structure, and a dopant layer disposed on a surface of the semiconductor structure. The method may include maintaining the substrate at a first temperature for a first interval, the first temperature corresponding to a vaporization temperature of the dopant layer. The method may further include rapidly cooling the substrate to a second temperature, less than the first temperature, and heating the substrate from the second temperature to a third temperature, greater than the first temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.