Semiconductor device and method of manufacture
US11631746B2 · kind B2 · utility
3Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2020 |
| Grant date | Apr 18, 2023 |
| Priority date | — |
| Expiry date | Mar 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a gaseous spacer and a method for forming the same are disclosed. In an embodiment, a method includes forming a gate stack over a substrate; forming a first gate spacer on sidewalls of the gate stack; forming a second gate spacer over the first gate spacer; removing a portion of the second gate spacer, at least a portion of the second gate spacer remaining; removing the first gate spacer to form a first opening; and after removing the first gate spacer, removing the remaining portion of the second gate spacer through the first opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.