Method for forming memory device
US11638379B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2021 |
| Grant date | Apr 25, 2023 |
| Priority date | — |
| Expiry date | Oct 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a memory device is provided. The memory device includes a substrate; a stack including a plurality of conductive layers and a plurality of insulating layers being alternatively stacked on the substrate; a plurality of memory structures formed on the substrate and penetrating the stack; a plurality of isolation structures formed on the substrate and penetrating the stack, wherein the isolation structures dividing the memory structures into a plurality of first memory structures and a plurality of second memory structures; and a plurality of common source pillars formed on the substrate and penetrating the stack, wherein the common source pillars directly contact the isolation structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.