Extreme ultraviolet mask absorber materials
US11640109B2 · kind B2 · utility
0Cited by
19References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2021 |
| Grant date | May 2, 2023 |
| Priority date | — |
| Expiry date | Sep 3, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/54
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from antimony and nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.