Plasma enhanced deposition of silicon-containing films at low temperature
US11640905B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 17, 2020 |
| Grant date | May 2, 2023 |
| Priority date | — |
| Expiry date | Mar 7, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Exemplary deposition methods may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. The method may include striking a plasma in the processing region between a faceplate and a pedestal of the semiconductor processing chamber. The pedestal may support a substrate including a patterned photoresist. The method may include maintaining a temperature of the substrate less than or about 200° C. The method may also include depositing a silicon-containing film along the patterned photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.