Method of implanting an implant species into a substrate at different depths

US11640908B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Joerg Ortner · Finkenstein, AT
• Marcel Heller · Neustadt in Sachsen, DE
• Dieter Kaiser · Dortmund, DE
• Nicolo Morgana · Dresden, DE
• Jens Schneider · Bielefeld, DE

Key dates

• Filing date: May 19, 2020
• Grant date: May 2, 2023
• Expiry date: May 19, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/65
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of implanting an implant species into a substrate at different depths is described. The method includes forming an implant mask over the substrate. The implant mask includes a first implant zone designed as an opening and a second implant zone designed as a block array. The implant species is implanted through the implant mask under an implant angle tilted against a block plane, such that a first implant area is formed by the implant species at a first depth in the substrate beneath the first implant zone and a second implant area is formed by the implant species at a second depth in the substrate beneath the second implant zone. The first depth is greater than the second depth.