Techniques and apparatus for unidirectional hole elongation using angled ion beams
US11640909B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2019 |
| Grant date | May 2, 2023 |
| Priority date | — |
| Expiry date | Apr 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of patterning a substrate. The method may include providing a cavity in a layer, disposed on the substrate, the cavity having a first length along a first direction and a first width along a second direction, perpendicular to the first direction, and wherein the layer has a first height along a third direction, perpendicular to the first direction and the second direction. The method may include depositing a sacrificial layer over the cavity in a first deposition procedure; and directing angled ions to the cavity in a first exposure, wherein the cavity is etched, and wherein after the first exposure, the cavity has a second length along the first direction, greater than the first length, and wherein the cavity has a second width along the second direction, no greater than the first width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.