Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor
US11640960B2 · kind B2 · utility
0Cited by
50References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2021 |
| Grant date | May 2, 2023 |
| Priority date | — |
| Expiry date | Jul 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48472
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A number of integrated circuits and methods of manufacturing the integrated circuits are described. An integrated circuit can include different semiconductor devices formed from different semiconductor systems in different regions over the same substrate. The integrated circuit can also include bulk regions of low-loss electrically-insulating material extending through the substrate and located between the different semiconductor regions. Passive RF circuit elements can be formed on the low-loss electrically-insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.