Memory cells and methods for forming memory cells

US11641789B2 · kind B2 · utility

Assignee

• GlobalFoundries Singapore Pte. Ltd. · SG

Inventors

• Yi Jiang · Singapore, SG
• Benfu Lin · Singapore, SG
• Lup San Leong · Singapore, SG
• Curtis Chun-I Hsieh · Singapore, SG
• Wanbing Yi · Singapore, SG
• Juan Boon Tan · Singapore, SG

Key dates

• Filing date: Jun 23, 2021
• Grant date: May 2, 2023
• Expiry date: Nov 25, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

According to various embodiments, there is provided a memory cell. The memory cell may include a transistor, a dielectric member, an electrode and a contact member. The dielectric member may be disposed over the transistor. The electrode may be disposed over the dielectric member. The contact member has a first end and a second end opposite to the first end. The first end is disposed towards the transistor, and the second end is disposed towards the dielectric member. The contact member has a side surface extending from the first end to the second end. The second end may have a recessed end surface that has a section that slopes towards the side surface so as to form a tip with the side surface at the second end. The dielectric member may be disposed over the second end of the contact member and may include at least a portion disposed over the tip.