Patent · US Active

Method for germanium enrichment around the channel of a transistor

US11646196B2 · kind B2 · utility

0Cited by

0References

8Claims

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Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Heimanu Niebojewski · Grenoble, FR
Christophe PLANTIER · Grenoble, FR
Shay Reboh · Grenoble, FR

Key dates

Filing date	Aug 24, 2021
Grant date	May 9, 2023
Priority date	—
Expiry date	Nov 25, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/018
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Making of a transistor structure comprising in this order:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.