Method of improving deposition induced CD imbalance using spatially selective ashing of carbon based film
US11651963B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2021 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | Aug 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming features over a wafer with a carbon based deposition is provided. The carbon based deposition is pretuned, wherein the pretuning causes a non-uniform removal of some of the carbon based deposition. An oxide deposition is deposited through an atomic layer deposition process, wherein the depositing the oxide deposition causes a non-uniform removal of some of the carbon based deposition. At least one additional process is provided, wherein the at least one additional process completes formation of features over the wafer, wherein the features are more uniform than features that would be formed without pretuning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.