Methods and apparatus for processing a substrate
US11651966B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2021 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | Jul 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.