Method for forming planarization layer and pattern forming method using the same
US11651968B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Oct 28, 2020 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | Jun 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a planarization layer includes: providing a substrate including a trench; coating a pre-thinner over a surface of the trench; forming a gap-filling material in the trench; coating a post-thinner over the gap-filling material; and performing a spinning process to rotate the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.