Semiconductor device structure with fine conductive contact and method for preparing the same
US11652151B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Jul 28, 2021 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | Aug 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76888
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a semiconductor device structure with a conductive contact and a method for preparing the semiconductor device structure. The semiconductor device structure includes a dielectric layer disposed over a semiconductor substrate; a conductive contact penetrating through the dielectric layer; and a metal oxide layer separating the conductive contact from the dielectric layer, wherein the conductive contact and the metal oxide layer comprise a same metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.