Lateral diffusion metal oxide semiconductor device and method for fabricating the same
US11652168B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | May 7, 2021 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | May 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
A method for fabricating a lateral diffusion metal oxide semiconductor (LDMOS) device includes the steps of first forming a first fin-shaped structure and a second fin-shaped structure on a substrate, forming a shallow trench isolation (STI) between the first fin-shaped structure and the second fin-shaped structure, forming a first gate structure on the first fin-shaped structure and a second gate structure on the second fin-shaped structure, forming a source region on the first fin-shaped structure, forming a drain region on the second fin-shaped structure, and forming a contact field plate directly on the STI.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.