Yi-Han Ye
10Patents
1h-index
11Co-inventors
47Inventor score
Filing activity: Jan 23, 2013 → Mar 30, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9640663B2 | High-voltage FinFET device having LDMOS structure and method for manufacturing the same | Electricity | 6 | Active |
| US10103248B2 | Method for manufacturing a high-voltage FinFET device having LDMOS structure | Electricity | 1 | Active |
| US11101384B1 | Power semiconductor device | Electricity | 1 | Active |
| US9632115B2 | Method for deriving characteristic values of MOS transistor | Physics | 1 | Active |
| US9876116B2 | Semiconductor structure and manufacturing method for the same | Electricity | 0 | Active |
| US9711646B2 | Semiconductor structure and manufacturing method for the same | Electricity | 0 | Active |
| US11652168B2 | Lateral diffusion metal oxide semiconductor device and method for fabricating the same | Electricity | 0 | Active |
| US11637200B2 | Power semiconductor device | Electricity | 0 | Active |
| US8822297B2 | Method of fabricating MOS device | Electricity | 0 | Active |
| US12288818B2 | Lateral diffusion metal oxide semiconductor device and method for fabricating the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.