Silicon carbide wafers with relaxed positive bow and related methods
US11654596B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2021 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Feb 18, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
Silicon carbide (SiC) wafers and related methods are disclosed that include intentional or imposed wafer shapes that are configured to reduce manufacturing problems associated with deformation, bowing, or sagging of such wafers due to gravitational forces or from preexisting crystal stress. Intentional or imposed wafer shapes may comprise SiC wafers with a relaxed positive bow from silicon faces thereof. In this manner, effects associated with deformation, bowing, or sagging for SiC wafers, and in particular for large area SiC wafers, may be reduced. Related methods for providing SiC wafers with relaxed positive bow are disclosed that provide reduced kerf losses of bulk crystalline material. Such methods may include laser-assisted separation of SiC wafers from bulk crystalline material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.