Plasma processing method
US11658040B2 · kind B2 · utility
0Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2019 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Jun 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a plasma processing method in which plasma etching is performed on a film to be etched by using a mask, the plasma processing method including: a deposition step of depositing a deposition film containing a boron element on the mask while a radio frequency power is supplied to a sample table on which a sample formed with the film to be etched is placed; and an etching step of etching the film to be etched by using plasma after the deposition step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.